Publications (120) Publications in which a researcher has participated

filter_list Condensed Matter Physics

2025

  1. A statistical and modeling study on the effects of radiation on Au/Ta/ZrO2(Y)/Pt/Ti memristive devices

    Chaos, Solitons and Fractals, Vol. 191

  2. Capturing magic angles in twisted bilayer graphene from information theory markers

    Physica E: Low-Dimensional Systems and Nanostructures, Vol. 169

2024

  1. A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories

    Materials Science in Semiconductor Processing, Vol. 169

  2. Compact modeling of hysteresis in organic thin-film transistors

    Organic Electronics, Vol. 129

  3. Different PCA approaches for vector functional time series with applications to resistive switching processes

    Mathematics and Computers in Simulation, Vol. 223, pp. 288-298

  4. Faraday rotation and transmittance as markers of topological phase transitions in 2D materials

    SciPost Physics, Vol. 16, Núm. 3

  5. High-Temporal-Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h-BN Memristors

    Advanced Functional Materials, Vol. 34, Núm. 15

  6. Hysteresis in memristors produces conduction inductance and conduction capacitance effects

    Physical Chemistry Chemical Physics, Vol. 26, Núm. 18, pp. 13804-13813

  7. Quantum revivals in HgTe/CdTe quantum wells and topological phase transitions

    SciPost Physics Core, Vol. 7, Núm. 2, pp. 1-18

  8. Stochastic resonance in 2D materials based memristors

    npj 2D Materials and Applications, Vol. 8, Núm. 1

  9. Thermal Compact Modeling and Resistive Switching Analysis in Titanium Oxide-Based Memristors

    ACS Applied Electronic Materials, Vol. 6, Núm. 2, pp. 1424-1433

  10. Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states

    Materials Science in Semiconductor Processing, Vol. 179

  11. Variability in HfO2-based memristors described with a new bidimensional statistical technique

    Nanoscale, Vol. 16, Núm. 22, pp. 10812-10818

2023

  1. 3D simulation of conductive nanofilaments in multilayer h-BN memristors via a circuit breaker approach

    Materials Horizons, Vol. 11, Núm. 4, pp. 949-957

  2. A Statistical Study of Resistive Switching Parameters in Au/Ta/ZrO2(Y)/Ta2O5/TiN/Ti Memristive Devices

    Physica Status Solidi (A) Applications and Materials Science, Vol. 220, Núm. 11

  3. Characterization and Modeling of Variability in Commercial Self-Directed Channel Memristors

    14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

  4. Conductance quantization in h-BN memristors

    Applied Physics Letters, Vol. 122, Núm. 20

  5. Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices

    Journal of Physics D: Applied Physics, Vol. 56, Núm. 36

  6. Hybrid 2D–CMOS microchips for memristive applications

    Nature, Vol. 618, Núm. 7963, pp. 57-62

  7. Modeling the Variability of Au/Ti/h-BN/Au Memristive Devices

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 4, pp. 1533-1539