The dependence of the electron mobility on the longitudinal electric field in MOSFETs

  1. Roldán, J.B.
  2. Gámiz, F.
  3. López-Villanueva, J.A.
  4. Carceller, J.E.
  5. Cartujo, P.
Revue:
Semiconductor Science and Technology

ISSN: 0268-1242

Année de publication: 1997

Volumen: 12

Número: 3

Pages: 321-330

Type: Article

DOI: 10.1088/0268-1242/12/3/014 GOOGLE SCHOLAR
La source de données: Scopus