Semi-empirical model of electron mobility in MOSFETS in strong inversion regime

  1. Banqueri, J.
  2. Löpez-Villanueva, J.
  3. Gémiz, F.
  4. Palma, A.
  5. Carceller, J.E.
Journal:
IEE Proceedings: Circuits, Devices and Systems

ISSN: 1350-2409

Year of publication: 1996

Volume: 143

Issue: 4

Pages: 202-206

Type: Article

DOI: 10.1049/IP-CDS:19960337 GOOGLE SCHOLAR
Data source: Scopus