Influence of the interface-state density on the electron mobility in silicon inversion layers

  1. Banqueri, J.
  2. Gámiz, F.
  3. Carceller, J.E.
  4. Cartujo, P.
  5. López-Villanueva, J.A.
Journal:
Journal of Electronic Materials

ISSN: 0361-5235 1543-186X

Year of publication: 1993

Volume: 22

Issue: 9

Pages: 1159-1163

Type: Article

DOI: 10.1007/BF02817689 GOOGLE SCHOLAR