Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm

1. Navarro, C.
2. Karg, S.
3. Marquez, C.
4. Navarro, S.
5. Convertino, C.
6. Zota, C.
7. Czornomaz, L.
8. Gamiz, F.