Impact of electron effective mass variation on the performance of InAs/GaSb Electron-Hole Bilayer Tunneling Field-Effect Transistor

  1. Padilla, J.L.
  2. Medina-Bailón, C.
  3. Rupakula, M.
  4. Alper, C.
  5. Sampedro, C.
  6. Gámiz, F.
  7. Ionescu, A.M.
Actas:
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

ISBN: 9781538648117

Ano de publicación: 2018

Volume: 2018-January

Páxinas: 1-4

Tipo: Achega congreso

DOI: 10.1109/ULIS.2018.8354755 GOOGLE SCHOLAR

Obxectivos de Desenvolvemento Sustentable

Fonte de datos: Scopus