Confinement-induced InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistor
- Padilla, J.L.
- Medina-Bailon, C.
- Alper, C.
- Gamiz, F.
- Ionescu, A.M.
Aldizkaria:
Applied Physics Letters
ISSN: 0003-6951
Argitalpen urtea: 2018
Alea: 112
Zenbakia: 18
Mota: Artikulua