Analysis of the heterogate electron-hole bilayer tunneling field-effect transistor with partially doped channels: Effects on tunneling distance modulation and occupancy probabilities
- Padilla, J.L.
- Medina-Bailón, C.
- Navarro, C.
- Alper, C.
- Gamiz, F.
- Ionescu, A.M.
ISSN: 0018-9383
Any de publicació: 2018
Volum: 65
Número: 1
Pàgines: 339-346
Tipus: Article