Comment on 'Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate'

  1. Padilla, J.L.
  2. Alper, C.
  3. Gámiz, F.
  4. Ionescu, A.M.
Zeitschrift:
Semiconductor Science and Technology

ISSN: 1361-6641,  0268-1242

Datum der Publikation: 2015

Ausgabe: 30

Nummer: 12

Art: Rezension

DOI: 10.1088/0268-1242/30/12/128001 GOOGLE SCHOLAR
Datenquelle: Scopus