Response to "comment on 'Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor'" [Appl. Phys. Lett. 106, 026102 (2015)]

  1. Padilla, J.L.
  2. Alper, C.
  3. Gámiz, F.
  4. Ionescu, A.M.
Revista:
Applied Physics Letters

ISSN: 0003-6951

Año de publicación: 2015

Volumen: 106

Número: 2

Tipo: Nota

DOI: 10.1063/1.4905866 GOOGLE SCHOLAR