Influence of the back-gate bias on the electron mobility of trigate MOSFETs

  1. Ruiz, F.G.
  2. Marin, E.G.
  3. Tienda-Luna, I.M.
  4. Godoy, A.
  5. Martinez-Blanque, C.
  6. Gamiz, F.
Konferenzberichte:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

ISBN: 9781467357364

Datum der Publikation: 2013

Seiten: 304-307

Art: Konferenz-Beitrag

DOI: 10.1109/SISPAD.2013.6650635 GOOGLE SCHOLAR

Objetivos de desarrollo sostenible

Datenquelle: Scopus