Combined effect of mechanical stressors and channel orientation on mobility in FDSOI n and p MOSFETs

  1. Gamiz, F.
  2. Donetti, L.
  3. Rodriguez, N.
  4. Sampedro, C.
  5. Faynot, O.
  6. Barbe, J.C.
Proceedings:
Proceedings - IEEE International SOI Conference

ISSN: 1078-621X

ISBN: 9781467326919

Year of publication: 2012

Type: Conference paper

DOI: 10.1109/SOI.2012.6404380 GOOGLE SCHOLAR
Data source: Scopus