On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs

1. Simoen, E.
2. Aoulaiche, M.
3. Veloso, A.
4. Jurczak, M.
5. Claeys, C.
6. Almeida, L.M.
7. Andrade, M.G.C.
8. Rodríguez, A.L.
9. Tejada, J.A.J.
10. Caillat, C.
11. Fazan, P.