Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach

  1. Aldana, S.
  2. Garciá-Fernández, P.
  3. Romero-Zaliz, R.
  4. González, M.B.
  5. Jiménez-Molinos, F.
  6. Gómez-Campos, F.
  7. Campabadal, F.
  8. Roldán, J.B.
Zeitschrift:
Journal of Physics D: Applied Physics

ISSN: 1361-6463,  0022-3727

Datum der Publikation: 2020

Ausgabe: 53

Nummer: 22

Art: Artikel

DOI: 10.1088/1361-6463/AB7BB6 GOOGLE SCHOLAR
Datenquelle: Scopus