A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs

  1. Aldana, S.
  2. García-Fernández, P.
  3. Rodríguez-Fernández, A.
  4. Romero-Zaliz, R.
  5. González, M.B.
  6. Jiménez-Molinos, F.
  7. Campabadal, F.
  8. Gómez-Campos, F.
  9. Roldán, J.B.
Journal:
Journal of Physics D: Applied Physics

ISSN: 1361-6463,  0022-3727

Year of publication: 2017

Volume: 50

Issue: 33

Type: Article

DOI: 10.1088/1361-6463/AA7939 GOOGLE SCHOLAR
Data source: Scopus