Modeling of radiation effects in MOSFETs

  1. J. Banqueri 1
  2. M.A. Carvajal 1
  3. A.J. Palma 1
  1. 1 Universidad de Granada
    info

    Universidad de Granada

    Granada, España

    ROR https://ror.org/04njjy449

Llibre:
Proceedings of the 2013 Spanish Conference on Electron Devices
  1. Héctor García
  2. Helena Castán

Editorial: Universidad de Valladolid

ISBN: 9781467346665

Any de publicació: 2013

Tipus: Capítol de llibre

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Resum

In this paper, the advances in the modeling of the radiation effects in MOSFETs will be briefly exposed. The change of the threshold voltage, mobility, subthreshold swing and the low frequency noise with the ionizing radiation will be shown and, if possible, modeled. Finally, the use of the MOSFET as dosimeter, mainly for clinical use, will be detailed, where our contribution in the readout techniques will be detailed in order to obtain a low-cost high performance dosimetric verification system.

Fuente de los datos: Dialnet