Subthreshold response of a MOSFET to radiation effects

  1. J. Banqueri 1
  2. M. A. Carvajal 1
  3. S. Martínez-García 1
  4. A. J. Palma 1
  5. M. Vilches 1
  6. A. M. Lallena 1
  1. 1 Universidad de Granada
    info

    Universidad de Granada

    Granada, España

    ROR https://ror.org/04njjy449

Libro:
Proceedings of the 2013 Spanish Conference on Electron Devices
  1. Héctor García
  2. Helena Castán

Editorial: Universidad de Valladolid

ISBN: 9781467346665

Año de publicación: 2013

Tipo: Capítulo de Libro

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Resumen

A study of the degradation of the subthreshold swing in a general-purpose pMOSFET is carried out to evaluate its use as a dosimetric parameter. Its reliability in terms of sensitivity, linearity, and reproducibility is experimentally tested and compared with the threshold voltage shift under gamma rays from a 60Co source up to 56 Gy, typical in radiotherapy treatments. The dependence of the subthreshold swing as a function of temperature is characterized and modeled as a mean for thermal compensation when used for dose measurement. Very promising results have been obtained for the subthreshold swing as a complementary dosimetric parameter to the threshold voltage for enhancing the confidence of dose verification systems based on MOSFETs.

Fuente de los datos: Dialnet