3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology

  1. Navarro, C.
  2. Donetti, L.
  3. Padilla, J.L.
  4. Medina-Bailon, C.
  5. Galdon, J.C.
  6. Marquez, C.
  7. Sampedro, C.
  8. Gamiz, F.
Journal:
Solid-State Electronics

ISSN: 0038-1101

Year of publication: 2023

Volume: 200

Type: Article

DOI: 10.1016/J.SSE.2022.108577 GOOGLE SCHOLAR lock_openOpen access editor
Data source: Scopus