High-Temporal-Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h-BN Memristors

1. Pazos, S.
2. Becker, T.
3. Villena, M.A.
4. Zheng, W.
5. Shen, Y.
6. Yuan, Y.
7. Alharbi, O.
8. Zhu, K.
9. Roldán, J.B.
10. Wirth, G.
11. Palumbo, F.
12. Lanza, M.