Description of Gate-to-Channel Tunneling Leakage Mechanism in a 2D Monte Carlo Simulator

  1. Medina-Bailon, C.
  2. Rodriguez, G.
  3. Padilla, J.L.
  4. Donetti, L.
  5. Navarro, C.
  6. Sampedro, C.
  7. Gamiz, F.
Actas:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

ISBN: 9784863488038

Año de publicación: 2023

2023 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2023

Páginas: 309-312

Tipo: Aportación congreso

DOI: 10.23919/SISPAD57422.2023.10319641 GOOGLE SCHOLAR
Fuente de los datos: Scopus