A Comparison of Resistive Switching Parameters for Memristive Devices with HfO2Mono Layers and Al2O3/HfO2Bilayers at the Wafer Scale

  1. Perez, E.
  2. Maldonado, D.
  3. Mahadevaiah, M.K.
  4. Quesada, E.P.-B.
  5. Cantudo, A.
  6. Jimenez-Molinos, F.
  7. Wenger, C.
  8. Wenger, C.
  9. Roldan, J.B.
Actas:
14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

ISBN: 9798350302400

Año de publicación: 2023

14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

Tipo: Aportación congreso

DOI: 10.1109/CDE58627.2023.10339417 GOOGLE SCHOLAR
Fuente de los datos: Scopus