Pervasive Electronics Advanced Research Laboratory
PEARL
Institut de Microélectronique, Electromagnétisme et Photonique
Grenoble, FranciaPublikationen in Zusammenarbeit mit Forschern von Institut de Microélectronique, Electromagnétisme et Photonique (3)
2018
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Gate-induced vs. implanted body doping impact on Z2-FET DC operation
2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
2007
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Geometric magnetoresistance and mobility behavior in single-gate and double-gate SOI devices
Proceedings - IEEE International SOI Conference
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Mobility issues in double-gate SOI MOSFETs: Characterization and analysis
ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference