Publikationen, an denen er mitarbeitet FRANCISCO PASADAS CANTOS (16)

2024

  1. Numerical study of synaptic behavior in amorphous HfO2-based ferroelectric-like FETs generated by voltage-driven ion migration

    Journal of Applied Physics, Vol. 136, Núm. 12

2023

  1. Compact Modeling of Two-Dimensional Field-Effect Biosensors

    Sensors, Vol. 23, Núm. 4

  2. Exploiting Ambipolarity in Graphene Field-Effect Transistors for Novel Designs on High-Frequency Analog Electronics

    Small, Vol. 19, Núm. 49

  3. Graphene-on-Silicon Hybrid Field-Effect Transistors

    Advanced Electronic Materials, Vol. 9, Núm. 5

  4. Reconfigurable frequency multipliers based on graphene field-effect transistors

    Discover Nano, Vol. 18, Núm. 1

  5. Variability Assessment of the Performance of MoS2-Based BioFETs

    Chemosensors, Vol. 11, Núm. 1

2022

  1. Periodic structures based on two-dimensional materials: application to phase shifters

    DCIS 2022 - Proceedings of the 37th Conference on Design of Circuits and Integrated Systems

2021

  1. Compact Modeling of pH-Sensitive FETs Based on 2-D Semiconductors

    IEEE Transactions on Electron Devices, Vol. 68, Núm. 11, pp. 5916-5919

  2. Hysteresis analysis of MoS2 Field Effect Transistors

    2021 Silicon Nanoelectronics Workshop, SNW 2021

  3. Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors

    Nanoscale Advances, Vol. 3, Núm. 8, pp. 2377-2382

  4. Unveiling the impact of the bias-dependent charge neutrality point on graphene based multi-transistor applications

    Nano Express, Vol. 2, Núm. 3

2020

  1. A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications

    IEEE Access, Vol. 8, pp. 209055-209063

  2. Numerical study of surface chemical reactions in 2D-FET based pH sensors

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

2019

  1. Device-to-circuit modeling approach to Metal - Insulator - 2D material FETs targeting the design of linear RF applications

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  2. GFET asymmetric transfer response analysis through access region resistances

    Nanomaterials, Vol. 9, Núm. 7

  3. Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances

    npj 2D Materials and Applications, Vol. 3, Núm. 1