Publicaciones en colaboración con investigadores/as de Universitat Autònoma de Barcelona (15)

2023

  1. Exploiting Ambipolarity in Graphene Field-Effect Transistors for Novel Designs on High-Frequency Analog Electronics

    Small, Vol. 19, Núm. 49

  2. Reconfigurable frequency multipliers based on graphene field-effect transistors

    Discover Nano, Vol. 18, Núm. 1

2021

  1. Compact Modeling of pH-Sensitive FETs Based on 2-D Semiconductors

    IEEE Transactions on Electron Devices, Vol. 68, Núm. 11, pp. 5916-5919

  2. Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors

    Nanoscale Advances, Vol. 3, Núm. 8, pp. 2377-2382

  3. Unveiling the impact of the bias-dependent charge neutrality point on graphene based multi-transistor applications

    Nano Express, Vol. 2, Núm. 3

2020

  1. A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications

    IEEE Access, Vol. 8, pp. 209055-209063

  2. Numerical study of surface chemical reactions in 2D-FET based pH sensors

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

2019

  1. Device-to-circuit modeling approach to Metal - Insulator - 2D material FETs targeting the design of linear RF applications

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  2. GFET asymmetric transfer response analysis through access region resistances

    Nanomaterials, Vol. 9, Núm. 7

  3. Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances

    npj 2D Materials and Applications, Vol. 3, Núm. 1

2012

  1. Accurate calculation of gate tunneling current in double-gate and single-gate SOI MOSFETs through gate dielectric stacks

    IEEE Transactions on Electron Devices, Vol. 59, Núm. 10, pp. 2589-2596

2011

  1. Erratum: Analytic model for the surface potential and drain current in negative capacitance field-effect transistors (IEEE Transactions on Electron Devices (2010) 57:10 (2405-2409))

    IEEE Transactions on Electron Devices

2010

  1. Analytic model for the surface potential and drain current in negative capacitance field-effect transistors

    IEEE Transactions on Electron Devices, Vol. 57, Núm. 10, pp. 2405-2409

2004

  1. Accurate deterministic numerical simulation of p-n junctions

    2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts

  2. Accurate deterministic numerical simulation of p-n junctions

    Journal of Computational Electronics, Vol. 3, Núm. 3-4, pp. 235-238