Publicaciones en las que colabora con FRANCISCO PASADAS CANTOS (16)

2023

  1. Exploiting Ambipolarity in Graphene Field-Effect Transistors for Novel Designs on High-Frequency Analog Electronics

    Small, Vol. 19, Núm. 49

  2. Graphene-on-Silicon Hybrid Field-Effect Transistors

    Advanced Electronic Materials

  3. Reconfigurable frequency multipliers based on graphene field-effect transistors

    Discover Nano, Vol. 18, Núm. 1

  4. Variability Assessment of the Performance of MoS2-Based BioFETs

    Chemosensors, Vol. 11, Núm. 1

2022

  1. Microwave Models for Graphene Ambipolar Devices: an Engineering Teaching Perspective

    TECHNO Review. International Technology, Science and Society Review / Revista Internacional de Tecnología, Ciencia y Sociedad, Vol. 11

  2. Microwave models for graphene ambipolar devices from an engineering teaching perspective

    CUICIID 2022: congreso Internacional sobre Comunicación, Innovación, Investigación y Docencia. Libro de actas

  3. Periodic structures based on two-dimensional materials: application to phase shifters

    DCIS 2022 - Proceedings of the 37th Conference on Design of Circuits and Integrated Systems

2021

  1. Compact Modeling of pH-Sensitive FETs Based on 2-D Semiconductors

    IEEE Transactions on Electron Devices, Vol. 68, Núm. 11, pp. 5916-5919

  2. Hysteresis analysis of MoS2 Field Effect Transistors

    2021 Silicon Nanoelectronics Workshop, SNW 2021

  3. Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors

    Nanoscale Advances, Vol. 3, Núm. 8, pp. 2377-2382

  4. Unveiling the impact of the bias-dependent charge neutrality point on graphene based multi-transistor applications

    Nano Express, Vol. 2, Núm. 3

2020

  1. A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications

    IEEE Access, Vol. 8, pp. 209055-209063

  2. Numerical study of surface chemical reactions in 2D-FET based pH sensors

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

2019

  1. Device-to-circuit modeling approach to Metal - Insulator - 2D material FETs targeting the design of linear RF applications

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  2. GFET asymmetric transfer response analysis through access region resistances

    Nanomaterials, Vol. 9, Núm. 7

  3. Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances

    npj 2D Materials and Applications, Vol. 3, Núm. 1