ROCIO CELESTE ROMERO ZALIZ-rekin lankidetzan egindako argitalpenak (12)

2023

  1. TiN/Ti/HfO2/TiN memristive devices for neuromorphic computing: from synaptic plasticity to stochastic resonance

    Frontiers in Neuroscience, Vol. 17

2021

  1. An analysis on the architecture and the size of quantized hardware neural networks based on memristors

    Electronics (Switzerland), Vol. 10, Núm. 24

  2. Influence of variability on the performance of HfO2 memristor-based convolutional neural networks

    Solid-State Electronics, Vol. 185

  3. Optimization of multi-level operation in rram arrays for in-memory computing

    Electronics (Switzerland), Vol. 10, Núm. 9

  4. Study of quantized hardware deep neural networks based on resistive switching devices, conventional versus convolutional approaches

    Electronics (Switzerland), Vol. 10, Núm. 3, pp. 1-14

  5. Toward reliable compact modeling of multilevel 1t-1r rram devices for neuromorphic systems

    Electronics (Switzerland), Vol. 10, Núm. 6, pp. 1-13

2020

  1. Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach

    Journal of Physics D: Applied Physics, Vol. 53, Núm. 22

2018

  1. A Kinetic Monte Carlo Simulator to Characterize Resistive Switching and Charge Conduction in Ni/HfO 2 /Si RRAMs

    Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018

  2. An in-depth description of bipolar resistive switching in Cu/HfOx/Pt devices, a 3D kinetic Monte Carlo simulation approach

    Journal of Applied Physics, Vol. 123, Núm. 15

  3. Analysis of conductive filament density in resistive random access memories: A 3D kinetic Monte Carlo approach

    Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 36, Núm. 6

  4. Multivariate analysis and extraction of parameters in resistive RAMs using the Quantum Point Contact model

    Journal of Applied Physics, Vol. 123, Núm. 1

2017

  1. A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs

    Journal of Physics D: Applied Physics, Vol. 50, Núm. 33