PEDRO GARCÍA FERNÁNDEZ-rekin lankidetzan egindako argitalpenak (8)

2020

  1. Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach

    Journal of Physics D: Applied Physics, Vol. 53, Núm. 22

2018

  1. A Kinetic Monte Carlo Simulator to Characterize Resistive Switching and Charge Conduction in Ni/HfO 2 /Si RRAMs

    Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018

  2. An in-depth description of bipolar resistive switching in Cu/HfOx/Pt devices, a 3D kinetic Monte Carlo simulation approach

    Journal of Applied Physics, Vol. 123, Núm. 15

  3. Analysis of conductive filament density in resistive random access memories: A 3D kinetic Monte Carlo approach

    Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 36, Núm. 6

  4. Multivariate analysis and extraction of parameters in resistive RAMs using the Quantum Point Contact model

    Journal of Applied Physics, Vol. 123, Núm. 1

2017

  1. A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs

    Journal of Physics D: Applied Physics, Vol. 50, Núm. 33

  2. Effects of the extension of conductive filaments, a simulation approach

    Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 35, Núm. 1

2015

  1. Semiempirical modeling of reset transitions in unipolar resistive-switching based memristors

    Radioengineering, Vol. 24, Núm. 2, pp. 420-424