2000

1. Influence of technological parameters on the behavior of the hole effective mass in SiGe structures

   Journal of Applied Physics, Vol. 88, Núm. 4, pp. 1978-1982

2. Semiempirical closed-form models for the inversion-layer centroid of a p-MOS including quantum effects

   Semiconductor Science and Technology, Vol. 15, Núm. 2, pp. 85-90