Juan J. Barbolla Sancho-rekin lankidetzan egindako argitalpenak (4)

1983

  1. Thermal emission rates and capture cross-section of majority carriers at titanium levels in silicon

    Solid State Electronics, Vol. 26, Núm. 1, pp. 1-6

1982

  1. Analysis of Thermal Capture of the Acceptor Level of Gold in Silicon

    physica status solidi (b), Vol. 111, Núm. 1, pp. 375-382

  2. Dependence of the electron cross section for the acceptor gold level in silicon on the gold to donor ratio

    Applied Physics Letters, Vol. 41, Núm. 7, pp. 656-658

  3. Interpretation of the electron capture by multiphonon emission at native levels in LPE gallium arsenide

    Journal of Physics C: Solid State Physics, Vol. 15, Núm. 7