Publicaciones en las que colabora con PEDRO CARTUJO ESTÉBANEZ (2)

2000

  1. Influence of technological parameters on the behavior of the hole effective mass in SiGe structures

    Journal of Applied Physics, Vol. 88, Núm. 4, pp. 1978-1982

  2. Semiempirical closed-form models for the inversion-layer centroid of a p-MOS including quantum effects

    Semiconductor Science and Technology, Vol. 15, Núm. 2, pp. 85-90