Mireia Bargalló González-rekin lankidetzan egindako argitalpenak (4)

2020

  1. Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach

    Journal of Physics D: Applied Physics, Vol. 53, Núm. 22

2018

  1. A Kinetic Monte Carlo Simulator to Characterize Resistive Switching and Charge Conduction in Ni/HfO 2 /Si RRAMs

    Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018

  2. Multivariate analysis and extraction of parameters in resistive RAMs using the Quantum Point Contact model

    Journal of Applied Physics, Vol. 123, Núm. 1

2017

  1. A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs

    Journal of Physics D: Applied Physics, Vol. 50, Núm. 33