Publicaciones en colaboración con investigadores/as de Universitat Autònoma de Barcelona (25)

2023

  1. Characterization of the Intrinsic and Extrinsic Resistances of a Microwave Graphene FET Under Zero Transconductance Conditions

    IEEE Transactions on Electron Devices, Vol. 70, Núm. 11, pp. 5977-5982

  2. Exploiting Ambipolarity in Graphene Field-Effect Transistors for Novel Designs on High-Frequency Analog Electronics

    Small, Vol. 19, Núm. 49

  3. Graphene field-effect transistor TCAD tool for circuit design under freeware

    Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023

  4. Reconfigurable frequency multipliers based on graphene field-effect transistors

    Discover Nano, Vol. 18, Núm. 1

2022

  1. Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field-Effect Transistors

    Advanced Materials, Vol. 34, Núm. 48

2021

  1. Compact Modeling of pH-Sensitive FETs Based on 2-D Semiconductors

    IEEE Transactions on Electron Devices, Vol. 68, Núm. 11, pp. 5916-5919

  2. Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors

    Nanoscale Advances, Vol. 3, Núm. 8, pp. 2377-2382

  3. Sensitivity analysis of a Graphene Field-Effect Transistors by means of Design of Experiments

    Mathematics and Computers in Simulation, Vol. 183, pp. 187-197

  4. Tolerance analysis of a GFET transistor for aerospace and aeronautical application

    IOP Conference Series: Materials Science and Engineering

  5. Unveiling the impact of the bias-dependent charge neutrality point on graphene based multi-transistor applications

    Nano Express, Vol. 2, Núm. 3

2020

  1. A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications

    IEEE Access, Vol. 8, pp. 209055-209063

  2. Does carrier velocity saturation help to enhance: F maxin graphene field-effect transistors?

    Nanoscale Advances, Vol. 2, Núm. 9, pp. 4179-4186

  3. Non-quasi-static effects in graphene field-effect transistors under high-frequency operation

    IEEE Transactions on Electron Devices, Vol. 67, Núm. 5, pp. 2188-2196

  4. Numerical study of surface chemical reactions in 2D-FET based pH sensors

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

2019

  1. Device-to-circuit modeling approach to Metal - Insulator - 2D material FETs targeting the design of linear RF applications

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  2. Erratum to: Large-signal model of graphene field-effect transistors-part I: Compact modeling of gfet intrinsic capacitances (IEEE Transactions on Electron Devices (2016) 63:7 (2936-2941) DOI: 10.1109/TED.2019.2902617)

    IEEE Transactions on Electron Devices

  3. GFET asymmetric transfer response analysis through access region resistances

    Nanomaterials, Vol. 9, Núm. 7

  4. Large-Signal Model of the Metal-Insulator-Graphene Diode Targeting RF Applications

    IEEE Electron Device Letters, Vol. 40, Núm. 6, pp. 1005-1008

  5. Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances

    npj 2D Materials and Applications, Vol. 3, Núm. 1

  6. Radio frequency performance projection and stability tradeoff of h-BN encapsulated graphene field-effect transistors

    IEEE Transactions on Electron Devices, Vol. 66, Núm. 3, pp. 1567-1573