Instituto de Microelectrónica de Barcelona -ko ikertzaileekin lankidetzan egindako argitalpenak (2)

2020

  1. Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach

    Journal of Physics D: Applied Physics, Vol. 53, Núm. 22

2018

  1. A Kinetic Monte Carlo Simulator to Characterize Resistive Switching and Charge Conduction in Ni/HfO 2 /Si RRAMs

    Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018