Publicaciones en colaboración con investigadores/as de Universitat Rovira i Virgili (12)

2015

  1. DC self-heating effects modelling in SOI and bulk FinFETs

    Microelectronics Journal, Vol. 46, Núm. 4, pp. 320-326

2014

  1. Analytical temperature dependent model for nanoscale double-gate MOSFETs reproducing advanced transport models

    Solid-State Electronics, Vol. 98, pp. 2-6

  2. Pseudo-Boltzmann model for modeling the junctionless transistors

    Solid-State Electronics, Vol. 95, pp. 19-22

2013

  1. Analytical Drain Current Model using Temperature dependence model in nanoscale Double-Gate (DG) MOSFETs

    2013 14TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (ULIS)

  2. Analytical drain current model using temperature dependence model in nanoscale Double-Gate (DG) MOSFETs

    ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'

  3. In-depth analysis and modelling of self-heating effects in nanometric DGMOSFETs

    Solid-State Electronics, Vol. 79, pp. 179-184

2012

  1. An advanced drain current model for DGMOSFETs including self-heating effects

    2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012

2011

  1. An analytical compact model for Schottky-barrier double gate MOSFETs

    Solid-State Electronics, Vol. 64, Núm. 1, pp. 78-84

  2. Analytical drain current model reproducing advanced transport models in nanoscale double-gate (DG) MOSFETs

    2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011

  3. Compact drain-current model for reproducing advanced transport models in nanoscale double-gate MOSFETs

    Semiconductor Science and Technology, Vol. 26, Núm. 9

  4. Impact of the fringing capacitance at the back of thin-film transistors

    Organic Electronics, Vol. 12, Núm. 6, pp. 936-949

2008

  1. A compact quantum model for fin-shaped field effect transistors valid from dc to high frequency and noise simulations

    Journal of Applied Physics, Vol. 103, Núm. 8