A qualitative study of the influence of confinement direction on phonon and interface roughness scattering in p-type FD/SOI devices

  1. Gómez-Campos, F.M.
  2. Rodríguez-Bolívar, S.
  3. Jiménez-Tejada, J.A.
  4. Carceller, J.E.
Journal:
Solid-State Electronics

ISSN: 0038-1101

Year of publication: 2005

Volume: 49

Issue: 9 SPEC. ISS.

Pages: 1454-1460

Type: Conference paper

DOI: 10.1016/J.SSE.2005.07.006 GOOGLE SCHOLAR
Data source: Scopus