I-V and small signal parameters modelling of ultrasubmicron MOSFETs including the significant electron-velocity overshoot effects, which are enhanced at low temperature

  1. Roldán, J.B.
  2. Gámiz, F.
  3. López-Villanueva, J.A.
  4. Carceller, J.E.
Actes:
Journal De Physique. IV : JP

ISSN: 1155-4339

Any de publicació: 1998

Volum: 8

Número: 3

Tipus: Article

DOI: 10.1051/JP4:1998305 GOOGLE SCHOLAR

Objectius de Desenvolupament Sostenible

Font de les dades: Scopus