I-V and small signal parameters modelling of ultrasubmicron MOSFETs including the significant electron-velocity overshoot effects, which are enhanced at low temperature

  1. Roldán, J.B.
  2. Gámiz, F.
  3. López-Villanueva, J.A.
  4. Carceller, J.E.
Proceedings:
Journal De Physique. IV : JP

ISSN: 1155-4339

Year of publication: 1998

Volume: 8

Issue: 3

Type: Article

DOI: 10.1051/JP4:1998305 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus