Low temperature mobility improvement in high-mobility strained-Si/Si1-xGex multilayer MOSFETs

  1. Roldán, J.B.
  2. Gámiz, F.
  3. López-Villanueva, J.A.
  4. Carceller, J.E.
Proceedings:
Journal De Physique. IV : JP

ISSN: 1155-4339

Year of publication: 1998

Volume: 8

Issue: 3

Type: Article

DOI: 10.1051/JP4:1998314 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus