Monte Carlo study on electron transport properties in double-gate fully depleted SOI-MOSFETs

  1. Gámiz, F.
  2. Roldán, J.B.
  3. López-Villanueva, J.A.
  4. Carceller, J.E.
Actes de conférence:
European Solid-State Device Research Conference

ISSN: 1930-8876

ISBN: 2863322214

Année de publication: 1997

Pages: 208-211

Type: Communication dans un congrès

DOI: 10.1109/ESSDERC.1997.194402 GOOGLE SCHOLAR
La source de données: Scopus