3-D TCAD Study of the implications of channel width and interface states on FD-SOI Z2-FETs

  1. Navarro, C.
  2. Navarro, S.
  3. Marquez, C.
  4. Padilla, J.L.
  5. Galy, P.
  6. Gamiz, F.
Journal:
IEEE Transactions on Electron Devices

ISSN: 1557-9646,  0018-9383

Year of publication: 2019

Volume: 66

Issue: 6

Pages: 2513-2519

Type: Article

DOI: 10.1109/TED.2019.2912457 GOOGLE SCHOLAR
Data source: Scopus