2D-TCAD simulation on retention time of Z2FET for DRAM application

  1. Duan, M.
  2. Adam-Lema, F.
  3. Cheng, B.
  4. Navarro, C.
  5. Wang, X.
  6. Georgiev, V.P.
  7. Gamiz, F.
  8. Millar, C.
  9. Asenov, A.
Proceedings:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

ISBN: 9784863486102

Year of publication: 2017

Volume: 2017-September

Pages: 325-328

Type: Conference paper

DOI: 10.23919/SISPAD.2017.8085330 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus