Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel FET Including Quantum Confinement

  1. Padilla, J.L.
  2. Alper, C.
  3. Godoy, A.
  4. Gamiz, F.
  5. Ionescu, A.M.
Aldizkaria:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Argitalpen urtea: 2015

Alea: 62

Zenbakia: 11

Orrialdeak: 3560-3566

Mota: Artikulua

DOI: 10.1109/TED.2015.2476350 GOOGLE SCHOLAR
Datuen iturria: Scopus