Two-band k · p model for Si-(110) electron devices

  1. Donetti, L.
  2. Gámiz, F.
  3. Biel, B.
  4. Sampedro, C.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 2013

Volumen: 114

Número: 7

Type: Article

DOI: 10.1063/1.4818617 GOOGLE SCHOLAR
La source de données: Scopus