Analytical drain current model using temperature dependence model in nanoscale Double-Gate (DG) MOSFETs

  1. Cheralathan, M.
  2. Sampedro, C.
  3. Gamiz, F.
  4. Iniguez, B.
Konferenzberichte:
ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'

ISBN: 9781467348003

Datum der Publikation: 2013

Seiten: 141-144

Art: Konferenz-Beitrag

DOI: 10.1109/ULIS.2013.6523503 GOOGLE SCHOLAR
Datenquelle: Scopus