Impact of back-gate biasing on effective field and mobility in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect-transistors

  1. Ohata, A.
  2. Rodriguez, N.
  3. Navarro, C.
  4. Donetti, L.
  5. Gamiz, F.
  6. Fenouillet-Beranger, F.C.
  7. Cristoloveanu, S.
Zeitschrift:
Journal of Applied Physics

ISSN: 0021-8979

Datum der Publikation: 2013

Ausgabe: 113

Nummer: 14

Art: Artikel

DOI: 10.1063/1.4799612 GOOGLE SCHOLAR

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