Impact of back-gate biasing on effective field and mobility in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect-transistors
- Ohata, A.
- Rodriguez, N.
- Navarro, C.
- Donetti, L.
- Gamiz, F.
- Fenouillet-Beranger, F.C.
- Cristoloveanu, S.
Zeitschrift:
Journal of Applied Physics
ISSN: 0021-8979
Datum der Publikation: 2013
Ausgabe: 113
Nummer: 14
Art: Artikel