Impact of back-gate biasing on effective field and mobility in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect-transistors

  1. Ohata, A.
  2. Rodriguez, N.
  3. Navarro, C.
  4. Donetti, L.
  5. Gamiz, F.
  6. Fenouillet-Beranger, F.C.
  7. Cristoloveanu, S.
Aldizkaria:
Journal of Applied Physics

ISSN: 0021-8979

Argitalpen urtea: 2013

Alea: 113

Zenbakia: 14

Mota: Artikulua

DOI: 10.1063/1.4799612 GOOGLE SCHOLAR

Objetivos de desarrollo sostenible