Analytic potential and charge model for III-V surrounding gate metal-oxide-semiconductor field-effect transistors

  1. Marin, E.G.
  2. Ruiz, F.G.
  3. Tienda-Luna, I.M.
  4. Godoy, A.
  5. Sánchez-Moreno, P.
  6. Gámiz, F.
Aldizkaria:
Journal of Applied Physics

ISSN: 0021-8979

Argitalpen urtea: 2012

Alea: 112

Zenbakia: 8

Mota: Artikulua

DOI: 10.1063/1.4759275 GOOGLE SCHOLAR

Objetivos de desarrollo sostenible

Datuen iturria: Scopus