Simulation of fabricated 20-nm schottky barrier MOSFETs on SOI: Impact of barrier lowering

  1. Padilla, J.L.
  2. Knoll, L.
  3. Gamiz, F.
  4. Zhao, Q.T.
  5. Godoy, A.
  6. Mantl, S.
Journal:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year of publication: 2012

Volume: 59

Issue: 5

Pages: 1320-1327

Type: Article

DOI: 10.1109/TED.2012.2187657 GOOGLE SCHOLAR
Data source: Scopus