Compact drain-current model for reproducing advanced transport models in nanoscale double-gate MOSFETs

  1. Cheralathan, M.
  2. Sampedro, C.
  3. Roldán, J.B.
  4. Gámiz, F.
  5. Iannaccone, G.
  6. Sangiorgi, E.
  7. Iñiguez, B.
Revue:
Semiconductor Science and Technology

ISSN: 0268-1242,  1361-6641

Année de publication: 2011

Volumen: 26

Número: 9

Type: Article

DOI: 10.1088/0268-1242/26/9/095015 GOOGLE SCHOLAR

Objectifs de Développement Durable

La source de données: Scopus