Analytical drain current model reproducing advanced transport models in nanoscale double-gate (DG) MOSFETs

  1. Cheralathan, M.
  2. Sampedro, C.
  3. Roldán, J.B.
  4. Gámiz, F.
  5. Iannaccone, G.
  6. Sangiorgi, E.
  7. Iñiguez, B.
Actes de conférence:
2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011

ISBN: 9781457700903

Année de publication: 2011

Pages: 27-30

Type: Communication dans un congrès

DOI: 10.1109/ULIS.2011.5757954 GOOGLE SCHOLAR
La source de données: Scopus